Thermal Stability of Strained AlGaN/GaN Heterostructures
ZHANG Min, XIAO Hong-Di, LIN Zhao-Jun
School of Physics and Microelectronics, Shandong University, Jinan 250100
Thermal Stability of Strained AlGaN/GaN Heterostructures
ZHANG Min;XIAO Hong-Di;LIN Zhao-Jun
School of Physics and Microelectronics, Shandong University, Jinan 250100
关键词 ：
73.40.Kp ,
85.30.-z ,
72.80.Ey
Abstract ： The thermal stability of strained AlGaN/GaN heterostructures is characterized by comparing unannealed and 700°C 30-min annealed Ni Schottky contacts prepared on strained AlGaN/GaN heterostructures. Using photoemission, capacitance--voltage measurements, and the self-consistent solution of Schrodinger's and Poisson's equations, it is found that after 700°C 30-min thermal annealing the Schottky barrier height of Ni Schottky contacts on strained AlGaN/GaN heterostructures is increased, and the sheet density of polarization charges and the sheet density of two-dimensional electron gas (2DEG) electrons for the strained AlGaN/GaN heterostructures are reduced. These results are closely related to the performance of AlGaN/GaN HFETs at high temperature.
Key words ：
73.40.Kp
85.30.-z
72.80.Ey
出版日期: 2006-07-01
:
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
85.30.-z
(Semiconductor devices)
72.80.Ey
(III-V and II-VI semiconductors)
引用本文:
ZHANG Min;XIAO Hong-Di;LIN Zhao-Jun. Thermal Stability of Strained AlGaN/GaN Heterostructures[J]. 中国物理快报, 2006, 23(7): 1902-1902.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I7/1902
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2006, Vol. 23 
