InGaAs Photodetectors Cut-off at 1.9μm Grown by Gas-Source Molecular Beam Epitaxy
ZHANG Yong-Gang, HAO Guo-Qiang, GU Yi, ZHU Cheng, LI Ai-Zhen, LIU Tian-Dong
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
InGaAs Photodetectors Cut-off at 1.9μm Grown by Gas-Source Molecular Beam Epitaxy
ZHANG Yong-Gang;HAO Guo-Qiang;GU Yi;ZHU Cheng;LI Ai-Zhen;LIU Tian-Dong
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
85.60.Gz ,
73.61.Ey ,
81.15.Hi ,
73.40.Kp
Abstract ： Using a linear graded Inx Ga1-x As as the buffer layer, positive-intrinsic-negative wavelength-extended In0.6 Ga0.4 As photodetectors with 50% cut-off wavelength of 1.9μm at room temperature were grown by using gas-source molecular beam epitaxy, and their performance over a wide temperature range has been extensively investigated. The detectors show typical dark current at bias voltage 50mV and the resistance--area product R0 A of 7nA/765\Ωcm2 and 31pA/404kΩcm2 at 290K and 210K, respectively. The thermal activation energy of the dark current in the temperature range 250--350K is 0.488eV.
Key words ：
85.60.Gz
73.61.Ey
81.15.Hi
73.40.Kp
出版日期: 2005-01-01
:
85.60.Gz
(Photodetectors (including infrared and CCD detectors))
73.61.Ey
(III-V semiconductors)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
ZHANG Yong-Gang;HAO Guo-Qiang;GU Yi;ZHU Cheng;LI Ai-Zhen;LIU Tian-Dong. InGaAs Photodetectors Cut-off at 1.9μm Grown by Gas-Source Molecular Beam Epitaxy[J]. 中国物理快报, 2005, 22(1): 250-253.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I1/250
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