Application of Plane Wave Method to the Calculation of Electronic States of Nano-Structures
LI Shu-Shen, XIA Jian-Bai
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Application of Plane Wave Method to the Calculation of Electronic States of Nano-Structures
LI Shu-Shen;XIA Jian-Bai
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
73.20.At
Abstract ： The electronic states of nano-structures are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The barrier width and the number of plane waves are proposed to be 2.5 times the effective Bohr radius and 15n , respectively, for n-dimensional nano-structures (n = 1, 2, 3). Our proposals can be widely applied in the design of various nano-structure devices.
Key words ：
73.20.At
出版日期: 2006-07-01
:
73.20.At
(Surface states, band structure, electron density of states)
引用本文:
LI Shu-Shen;XIA Jian-Bai. Application of Plane Wave Method to the Calculation of Electronic States of Nano-Structures[J]. 中国物理快报, 2006, 23(7): 1896-1899.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I7/1896
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2006, Vol. 23 
