Interface Properties of InAs/AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity
LI Zhi-Hua, GUO Li-Wei, WU Shu-Dong, WANG Wen-Xin, HUANG Qi, ZHOU Jun-Ming
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Interface Properties of InAs/AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity
LI Zhi-Hua;GUO Li-Wei;WU Shu-Dong;WANG Wen-Xin;HUANG Qi;ZHOU Jun-Ming
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 :
61.10.Kw ,
73.40.Kp ,
73.21.Cd ,
68.35.Ct ,
68.18.Fg
Abstract : Two kinds of superlattice interfaces of InAs/AlSb superlattices are realized in an optimized interface growth process, where one is AlAs-like and the other is InSb-like grown on a relaxed AlSb buffer layer. The superlattice properties such as interface roughness and layer thickness are studied by grazing incidence x-ray reflectivity. The reflectivity curves are simulated by standard software till the simulation curves match well with the experimental curves. The simulation indicates that AlAs-like interfaces are much rougher than InSb-like interfaces. Grazing incidence x-ray reflectivity is also discussed as a powerful tool to assessing the structure properties of superlattices.
Key words :
61.10.Kw
73.40.Kp
73.21.Cd
68.35.Ct
68.18.Fg
出版日期: 2005-07-01
:
61.10.Kw
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
73.21.Cd
(Superlattices)
68.35.Ct
(Interface structure and roughness)
68.18.Fg
(Liquid thin film structure: measurements and simulations)
引用本文:
LI Zhi-Hua;GUO Li-Wei;WU Shu-Dong;WANG Wen-Xin;HUANG Qi;ZHOU Jun-Ming. Interface Properties of InAs/AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity[J]. 中国物理快报, 2005, 22(7): 1729-1731.
LI Zhi-Hua, GUO Li-Wei, WU Shu-Dong, WANG Wen-Xin, HUANG Qi, ZHOU Jun-Ming. Interface Properties of InAs/AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity. Chin. Phys. Lett., 2005, 22(7): 1729-1731.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I7/1729
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