Electronic Properties of Red P-Type Tl2 S5 Single Crystals
G. A. Gamal, M. Abou Zied, A. A. Ebnalwaled
Department of Physics, Faculty of Science, South Valley University, Qena 83511, Egypt
Electronic Properties of Red P-Type Tl2 S5 Single Crystals
G. A. Gamal;M. Abou Zied;A. A. Ebnalwaled
Department of Physics, Faculty of Science, South Valley University, Qena 83511, Egypt
关键词 ：
81.10.-h ,
81.10.Fq ,
72.80.Ey ,
05.60.Cd
Abstract ： Single crystals of red Tl2 S5 were prepared by a special modified vertical Bridgman and Stockbarger technique. This growth was performed in our laboratory. The influences of temperature on the electrical conductivity, Hall mobility, carrier concentration, and thermoelectric power (TEP) were carried out in the temperature range 277-413K. Throughout these measurements, various physical parameters such as effective mass of charge carriers, carrier mobility, diffusion coefficient, and the relaxation time for both majority and minority carriers were found.
Key words ：
81.10.-h
81.10.Fq
72.80.Ey
05.60.Cd
出版日期: 2005-06-01
:
81.10.-h
(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
81.10.Fq
(Growth from melts; zone melting and refining)
72.80.Ey
(III-V and II-VI semiconductors)
05.60.Cd
(Classical transport)
引用本文:
G. A. Gamal;M. Abou Zied;A. A. Ebnalwaled. Electronic Properties of Red P-Type Tl2 S5 Single Crystals[J]. 中国物理快报, 2005, 22(6): 1530-1532.
2 S5 Single Crystals. Chin. Phys. Lett., 2005, 22(6): 1530-1532.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I6/1530
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2005, Vol. 22 
