Temperature-Dependent Galvanomagnetic Measurements on Doped InSb and InAs Grown by Liquid Encapsulated Czochralski
M. Kasap1, S. Acar1, S. Öcelik1, S. Karadeniz2, N. Tugluoglu2
1Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokullar, 06500, Ankara, Turkey
1Department of Materials Research, Ankara Nuclear Research and Training Center, 06100, Besevler, Ankara, Turkey
Temperature-Dependent Galvanomagnetic Measurements on Doped InSb and InAs Grown by Liquid Encapsulated Czochralski
M. Kasap1;S. Acar1;S. Öcelik1;S. Karadeniz2;N. Tugluoglu2
1Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokullar, 06500, Ankara, Turkey
1Department of Materials Research, Ankara Nuclear Research and Training Center, 06100, Besevler, Ankara, Turkey
Abstract： Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped InSb and S-doped InAs samples grown by the liquid encapsulated Czochralski technique were carried out as a function of temperature (14-350K) and magnetic field (0-1.35T). In Te-doped InSb, an impurity level with energy E1 = 3meV and the activation energy E0= 0.26eV, which is the band gap energy, are obtained from the resistivity and Hall carrier concentration analysis. In S-doped InAs, both the linear and power law models are used in explaining the temperature-dependent resistivity. The effects of impurities on the electron and magnetic transportation properties of InAs and InSb have also been discussed.
M. Kasap;S. Acar;S. Öcelik;S. Karadeniz;N. Tugluoglu. Temperature-Dependent Galvanomagnetic Measurements on Doped InSb and InAs Grown by Liquid Encapsulated Czochralski[J]. 中国物理快报, 2005, 22(5): 1218-1221.
M. Kasap, S. Acar, S. Ö, celik, S. Karadeniz, N. Tugluoglu. Temperature-Dependent Galvanomagnetic Measurements on Doped InSb and InAs Grown by Liquid Encapsulated Czochralski. Chin. Phys. Lett., 2005, 22(5): 1218-1221.
2005, Vol. 22 
