Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures
WEN Bo, JIANG Ruo-Lian, ZHOU Jian-Jun, JI Xiao-Li, LIANG Ling-Yan, KONG Yue-Chan, SHEN Bo, ZHANG Rong, ZHENG You-Dou
Department of Physics and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, Nanjing University, Nanjing 210093
Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures
Department of Physics and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, Nanjing University, Nanjing 210093
Abstract： The unintentionally doped samples of Al0.22Ga0.78N/GaN/Al0.22Ga0.78N/GaN multi-heterostructures have been designed and fabricated. The polarization induced charge and free-carrier charge distributions have been demonstrated and the energy band profile has also been calculated. The results indicate the existence of two-dimensional electron gas (2DEG) and hole well at the heterointerfaces. By means of variable temperature Hall measurements, the carrier mobility and the sheet carrier density were measured from 300 to 77 K. The significant increment of carrier mobility at low temperature also verified the existence of the 2DEG.
WEN Bo;JIANG Ruo-Lian;ZHOU Jian-Jun;JI Xiao-Li;LIANG Ling-Yan;KONG Yue-Chan;SHEN Bo;ZHANG Rong;ZHENG You-Dou. Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures[J]. 中国物理快报, 2004, 21(4): 720-722.
WEN Bo, JIANG Ruo-Lian, ZHOU Jian-Jun, JI Xiao-Li, LIANG Ling-Yan, KONG Yue-Chan, SHEN Bo, ZHANG Rong, ZHENG You-Dou. Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures. Chin. Phys. Lett., 2004, 21(4): 720-722.
2004, Vol. 21 
