Photoelastic Effect and Optimal Waveguide Structure in InGaAsP/InP Double Heterostructures

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	XING Qi-Jiang

关键词 ： 42.79.Gn, 85.60.Bt, 78.66.Fd

Abstract： Stress field profiles and dielectric constant variations in InGaAsP/InP double heterostructures caused by a 110 nm-thick W_0.95Ni_0.05 metal thin film strain stripe are calculated. Both theoretical and experimental results demonstrate the form of photoelastic waveguide structure in the InGaAsP/InP double heterostructures. For a 4μm-width W_0.95Ni_0.05 thin film strain stripe, the difference between dielectric constants of waveguide at the center and the edge of stripe is $9 \times 10^-2 - 2 x 10^-2 in the depth range from 0.2 to 2μm of the semiconductor. At a given depth, the width of strain stripe for optimal waveguide structure is determined. The maximal change of dielectric constant for the waveguide is an inverse proportion of the depth.

Key words： 42.79.Gn 85.60.Bt 78.66.Fd

出版日期: 2002-05-01

:	42.79.Gn	(Optical waveguides and couplers)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)
	78.66.Fd	(III-V semiconductors)

引用本文:

XING Qi-Jiang. Photoelastic Effect and Optimal Waveguide Structure in InGaAsP/InP Double Heterostructures [J]. 中国物理快报, 2002, 19(5): 685-688.
XING Qi-Jiang. Photoelastic Effect and Optimal Waveguide Structure in InGaAsP/InP Double Heterostructures . Chin. Phys. Lett., 2002, 19(5): 685-688.

链接本文:

https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2002/V19/I5/685