Room-Temperature Ferromagnetism of Ga1-xMnxN Grown by Low-Pressure Metalorganic Chemical Vapour Deposition
CHEN Zhi-Tao1,2,3, SU Yue-Yong1,2,3, YANG Zhi-Jian1,2,3, ZHANG Yan1,2,3, ZHANG Bin1,2,3, GUO Li-Ping4, XU Ke1,2,3, PAN Yao-Bao1,2,3, ZHANG Han1,2, ZHANG Guo-Yi1,2,3
1School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871
2Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871
3State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871
4Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049
Room-Temperature Ferromagnetism of Ga1-xMnxN Grown by Low-Pressure Metalorganic Chemical Vapour Deposition
1School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871
2Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871
3State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871
4Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049
Abstract： Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metal-organic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T=380K with hysteresis curves showing a coercivity of 50--100Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x=0.038 by proton-induced x-ray emission.
2006, Vol. 23 
