Low-Threshold and High-Power Oxide-Confined 850nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure
CHEN Min, GUO Xia, DENG Jun, GAI Hong-Xing, DONG Li-Min, QU Hong-Wei, GUAN Bao-Lu, GAO Guo, SHEN Guang-Di
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022
Low-Threshold and High-Power Oxide-Confined 850nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022
Abstract： The low-threshold and high-power oxide-confined 850nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting lasers (VCSELs) based on the intra-cavity contacted structure are fabricated. The threshold current of 0.1mA for a 10-μm oxide-aperture device is obtained with the threshold current density of 0.127kA/cm2. For a 22-μm oxide-aperture device, the peak optical output power reaches to 14.6mW at the current injection of 25mA under the room temperature and pulsed operation with a threshold current of 2mA, which corresponds to the threshold current density of 0.526kA/cm2. The lasing wavelength is 855.4nm. The full wave at half maximum is 2.2nm. The analysis of the characteristics and the fabrication of
VCSELs are also described.
2005, Vol. 22 
