Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene
WANG Wei1, SHI Jia-Wei1, LIANG Chang1, ZHANG Hong-Mei1, LIU Ming-Da1, QUAN Bao-Fu1, GUO Shu-Xu1,FANG Jun-Feng2, MA Dong-Ge2
1National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012
2State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022
Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene
WANG Wei1;SHI Jia-Wei1;LIANG Chang1;ZHANG Hong-Mei1;LIU Ming-Da1;QUAN Bao-Fu1;GUO Shu-Xu1,FANG Jun-Feng2;MA Dong-Ge2
1National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012
2State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022
Abstract： Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm2/Vs, whereas the field-effect electron mobility was about 0.02cm2/Vs for n-channel.
2005, Vol. 22 
