Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET
ZHENG Zhong-Shan1,3, LIU Zhong-Li1, ZHANG Guo-Qiang1, LI Ning1, FAN Kai1, ZHANG En-Xia2, YI Wan-Bing2, CHEN Meng2, WANG Xi2
1Microelectronics R&D Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3Department of Physics, Jinan University, Jinan 250022
Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET
1Microelectronics R&D Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3Department of Physics, Jinan University, Jinan 250022
Abstract： Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8×1015, 2×1016, and 1×1017cm-2. The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.
ZHENG Zhong-Shan;LIU Zhong-Li; ZHANG Guo-Qiang;LI Ning;FAN Kai;ZHANG En-Xia;YI Wan-Bing;CHEN Meng;WANG Xi. Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET[J]. 中国物理快报, 2005, 22(3): 654-656.
ZHENG Zhong-Shan, LIU Zhong-Li, ZHANG Guo-Qiang, LI Ning, FAN Kai, ZHANG En-Xia, YI Wan-Bing, CHEN Meng, WANG Xi. Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET. Chin. Phys. Lett., 2005, 22(3): 654-656.
2005, Vol. 22 
