中国物理快报  2005, Vol. 22 Issue (3): 654-656    
  Original Articles 本期目录 | 过刊浏览 | 高级检索 |
Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET
ZHENG Zhong-Shan1,3, LIU Zhong-Li1, ZHANG Guo-Qiang1, LI Ning1, FAN Kai1, ZHANG En-Xia2, YI Wan-Bing2, CHEN Meng2, WANG Xi2
1Microelectronics R&D Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 3Department of Physics, Jinan University, Jinan 250022
Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET
ZHENG Zhong-Shan1,3;LIU Zhong-Li1; ZHANG Guo-Qiang1;LI Ning1;FAN Kai1;ZHANG En-Xia2;YI Wan-Bing2;CHEN Meng2;WANG Xi2
1Microelectronics R&D Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 3Department of Physics, Jinan University, Jinan 250022