Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon
ZHANG Jian-Guo, WANG Xiao-Xin, CHENG Bu-Wen, YU Jin-Zhong, WANG Qi-Ming
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon
ZHANG Jian-Guo; WANG Xiao-Xin; CHENG Bu-Wen;YU Jin-Zhong; WANG Qi-Ming
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
61.72.Tt ,
78.55.2m ,
76.30.Kg
Abstract ： Intense room-temperature near infrared (NIR) photoluminescence (980nm and 1032nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the 2 F5/2 and 2 F7/2 levels of Yb3+ in SiO2 . The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb3+ in SiO2 . Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb3+ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.
Key words ：
61.72.Tt
78.55.2m
76.30.Kg
出版日期: 2006-08-01
引用本文:
ZHANG Jian-Guo; WANG Xiao-Xin; CHENG Bu-Wen;YU Jin-Zhong; WANG Qi-Ming. Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon[J]. 中国物理快报, 2006, 23(8): 2183-2186.
2 Films on Silicon. Chin. Phys. Lett., 2006, 23(8): 2183-2186.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I8/2183
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