N-Doped LaAlO3/Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability
XIANG Wen-Feng1, LU Hui-Bin1, CHEN Zheng-Hao1, HE Meng1, LU Xu-Bing2,3, LIU Li-Feng1, GUO Hai-Zhong1, ZHOU Yue-Liang1
1Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
2Institute of Microelectronics, Peking University, Beijing 100871
3Digital DNA Laboratories, Motorola Inc., Beijing 100871
N-Doped LaAlO3/Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability
1Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
2Institute of Microelectronics, Peking University, Beijing 100871
3Digital DNA Laboratories, Motorola Inc., Beijing 100871
Abstract： High quality amorphous N-doped LaAlO3 (LaAlON) films have been deposited on Si (100) in nitrogen gas by laser molecular beam epitaxy. The chemical nature and physical distribution of N in LaAlON films has been performed by x-ray photoemission spectroscopy. Compared with LaAlO3, a significant improvement in the interfacial quality and leakage current density was obtained by nitrogen additive. At gate voltage +1V, the leakage current density of the LaAlON film with an equivalent oxide thickness as thin as 2nm is obtained to be 2.9× 10-6A/cm2, which decreases almost two orders of magnitude from that of LaAlO3 film with the same thickness. Moreover, high-resolution transmission electron microscope analysis show that the LaAlON sample is still amorphous with a very sharp interface between the LaAlON layer and the Si substrate after annealed at 900°C for 60s.
XIANG Wen-Feng;LU Hui-Bin;CHEN Zheng-Hao;HE Meng;LU Xu-Bing;LIU Li-Feng;GUO Hai-Zhong;ZHOU Yue-Liang. N-Doped LaAlO3/Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability[J]. 中国物理快报, 2005, 22(1): 182-184.
XIANG Wen-Feng, LU Hui-Bin, CHEN Zheng-Hao, HE Meng, LU Xu-Bing, LIU Li-Feng, GUO Hai-Zhong, ZHOU Yue-Liang. N-Doped LaAlO3/Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability. Chin. Phys. Lett., 2005, 22(1): 182-184.
2005, Vol. 22 
