Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin SiO2 by In-Situ Fabrication Technique
WU Liang-Cai, CHEN Kun-Ji, YU Lin-Wei, DAI Min, MA Zhong-Yuan, HAN Pei-Gao, LI Wei, HUANG Xin-Fan
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin SiO2 by In-Situ Fabrication Technique
WU Liang-Cai;CHEN Kun-Ji;YU Lin-Wei;DAI Min;MA Zhong-Yuan;HAN Pei-Gao;LI Wei;HUANG Xin-Fan
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
81.15.Gh ,
73.23.Hk ,
73.40.Qv
Abstract ： Structures of nanocrystalline-Si (nc-Si) sandwiched between two asymmetric ultrathin SiO2 layers were fabricated. The nc-Si (dot density of 1011 cm-2 ) was formed by decomposition of hydrogen-diluted silane and the ultrathin SiO2 layers (about 2nm) were prepared by plasma oxidation at a lower temperature (250°C). The whole fabrication processes were completed in situ in a plasma-enhanced chemical vapour deposition system. By using the capacitance--voltage (C--V) and conductance--voltage (G--V) spectroscopy, we studied the electronic properties of the annealed samples. The experimental results show that there are distinct capacitance peaks and conductance plateau or peaks for annealed samples at room temperature, which can be explained by direct tunnelling of electrons into the nc-Si. At the same time, Coulomb blockade plays an important role in the electronic transport in the nc-Si. The effect of thermal annealing in N2 ambient on the electronic properties was studied and the results indicate that high temperature (1000°C) annealing can improve the size uniformity of the nc-Si prepared by decomposition of hydrogen-diluted silane.
Key words ：
81.15.Gh
73.23.Hk
73.40.Qv
出版日期: 2005-03-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
73.23.Hk
(Coulomb blockade; single-electron tunneling)
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
引用本文:
WU Liang-Cai;CHEN Kun-Ji;YU Lin-Wei;DAI Min;MA Zhong-Yuan;HAN Pei-Gao;LI Wei;HUANG Xin-Fan. Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin SiO2 by In-Situ Fabrication Technique[J]. 中国物理快报, 2005, 22(3): 733-736.
2 by In-Situ Fabrication Technique. Chin. Phys. Lett., 2005, 22(3): 733-736.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I3/733
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2005, Vol. 22 
