Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2 O3 Ultra-Thin Film on Si Substrate
XU Min, LU Hong-Liang, DING Shi-Jin, SUN Liang, ZHANG Wei, WANG Li-Kang
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433
Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2 O3 Ultra-Thin Film on Si Substrate
XU Min;LU Hong-Liang;DING Shi-Jin;SUN Liang;ZHANG Wei;WANG Li-Kang
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433
关键词 ：
81.15.Gh ,
73.40.Qv ,
77.55.+f
Abstract ： Ultra-thin Al2 O3 dielectric films have been deposited on Si substrates by using trimethyl aluminium (TMA) and water as precursors in an atomic layer deposition (ALD) system. Growth of the interfacial layer between ultra-thin Al2 O3 and the Si substrate is effectively suppressed by a long-time TMA surface pretreatment of the Si substrate prior to Al2 O3 atomic layer deposition. High resolution transmission electron microscopy (TEM) images show that the thickness of the interfacial layer is reduced to be 0.5nm for the sample with TMA pretreatment lasting 3600s. The x-ray photoelectron spectroscopy results indicate that the Al2 O3 film deposited on the TMA-pretreated Si surface exhibits very good thermal stability. However, a hysteresis of about 50mV is observed in the C--V curve of the samples with the TMA pretreatment.
Key words ：
81.15.Gh
73.40.Qv
77.55.+f
出版日期: 2005-09-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
77.55.+f
引用本文:
XU Min;LU Hong-Liang;DING Shi-Jin;SUN Liang;ZHANG Wei;WANG Li-Kang. Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2 O3 Ultra-Thin Film on Si Substrate[J]. 中国物理快报, 2005, 22(9): 2418-2421.
2 O3 Ultra-Thin Film on Si Substrate. Chin. Phys. Lett., 2005, 22(9): 2418-2421.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I9/2418
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