Electrical Properties of La-Doped Al2 O3 Films on Si (100) Substrates as a High-Dielectric-Constant Gate Material
LIU Yan-Ping, LAN Wei, HE Zhi-Wei, WANG Yin-Yue
School of Physical Science and Technology, Lanzhou University, Lanzhou 730000
Electrical Properties of La-Doped Al2 O3 Films on Si (100) Substrates as a High-Dielectric-Constant Gate Material
LIU Yan-Ping;LAN Wei;HE Zhi-Wei;WANG Yin-Yue
School of Physical Science and Technology, Lanzhou University, Lanzhou 730000
关键词 ：
77.84.-s ,
77.22.-d ,
77.55.+f
Abstract ： Amorphous La-doped Al2 O3 (La: Al2 O3 ) thin films are deposited on n-type (100) Si substrates by rf magnetron co-sputtering. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy. Capacitance--voltage measurement shows that the dielectric constant k of La-doped Al2 O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La:Al2 O3 /Si metal oxide semiconductor, the dominant conduction stems from the space-charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2 O3 can meet the requirement of next-generation gate materials.
Key words ：
77.84.-s
77.22.-d
77.55.+f
出版日期: 2006-08-01
:
77.84.-s
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
77.22.-d
(Dielectric properties of solids and liquids)
77.55.+f
引用本文:
LIU Yan-Ping;LAN Wei;HE Zhi-Wei;WANG Yin-Yue. Electrical Properties of La-Doped Al2 O3 Films on Si (100) Substrates as a High-Dielectric-Constant Gate Material[J]. 中国物理快报, 2006, 23(8): 2236-2238.
2 O3 Films on Si (100) Substrates as a High-Dielectric-Constant Gate Material. Chin. Phys. Lett., 2006, 23(8): 2236-2238.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I8/2236
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