Structural and Electrical Characteristics of Pb(Zr0.53 ,Ti0.47 )O3 Thin Films Deposited on Si (100) Substrates
CHEN Bin, YANG Hao, MIAO Jun, ZHAO Li, XU Bo, DONG Xiao-Li, CAO Li-Xin, QIU Xiang-Gang, ZHAO Bai-Ru
National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, P O Box 603, Beijing 100080
Structural and Electrical Characteristics of Pb(Zr0.53 ,Ti0.47 )O3 Thin Films Deposited on Si (100) Substrates
CHEN Bin;YANG Hao;MIAO Jun;ZHAO Li;XU Bo;DONG Xiao-Li;CAO Li-Xin;QIU Xiang-Gang;ZHAO Bai-Ru
National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, P O Box 603, Beijing 100080
关键词 ：
77.84.-s ,
84.37.+q ,
72.20.-i
Abstract ： Pb(Zr0.53 ,Ti0.47 )O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only (110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C--V) and current versus voltage (I--V) measurements. The clockwise trace of the C--V curve shows ferroelectric polarization switching, as is expected. From the I--V curves, the Schottky emission and space-charge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.
Key words ：
77.84.-s
84.37.+q
72.20.-i
出版日期: 2005-03-01
:
77.84.-s
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
84.37.+q
(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
72.20.-i
(Conductivity phenomena in semiconductors and insulators)
引用本文:
CHEN Bin;YANG Hao;MIAO Jun;ZHAO Li;XU Bo;DONG Xiao-Li;CAO Li-Xin;QIU Xiang-Gang;ZHAO Bai-Ru. Structural and Electrical Characteristics of Pb(Zr0.53 ,Ti0.47 )O3 Thin Films Deposited on Si (100) Substrates[J]. 中国物理快报, 2005, 22(3): 697-700.
0.53 ,Ti0.47 )O3 Thin Films Deposited on Si (100) Substrates. Chin. Phys. Lett., 2005, 22(3): 697-700.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I3/697
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