Phase Transition of Graphitic-C3N4 under High Pressure by In Situ Resistance Measurement in a Diamond Anvil Cell
HAN Yong-Hao1, LUO Ji-Feng1, GAO Chun-Xiao1, MA Hong-An1, HAO Ai-Min1, LI Yan-Chun2, LI Xiao-Dong2, LIU Jing2, LI Ming1, LIU Hong-Wu1, ZOU Guang-Tian1
1State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012
2Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
Phase Transition of Graphitic-C3N4 under High Pressure by In Situ Resistance Measurement in a Diamond Anvil Cell
1State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012
2Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
Abstract： In situ} resistance measurement of Graphitic-C3N4 has been performed under high pressure in a diamond anvil cell. The result reveals that there are changes of electron transport behaviour. As the pressure increases from ambient to 30GPa, three abnormal resistance changes can be found at room temperature and two are found at 77K. The abnormal resistance dropped at 5GPa is close to the phase transition pressure from the P6m2 structure to the p structure predicted by Lowther et al. [Phys. Rev. B 59 (1999) 11683] Another abnormal change of resistance at 12GPa is related to the phase transition from g-C3N4 to cubic-C3N4 [Teter and Hemley, Science 271 (1996) 53].
(Conductivity phenomena in semiconductors and insulators)
引用本文:
HAN Yong-Hao;LUO Ji-Feng;GAO Chun-Xiao;MA Hong-An;HAO Ai-Min;LI Yan-Chun;LI Xiao-Dong;LIU Jing;LI Ming;LIU Hong-Wu;ZOU Guang-Tian. Phase Transition of Graphitic-C3N4 under High Pressure by In Situ Resistance Measurement in a Diamond Anvil Cell[J]. 中国物理快报, 2005, 22(6): 1347-1349.
HAN Yong-Hao, LUO Ji-Feng, GAO Chun-Xiao, MA Hong-An, HAO Ai-Min, LI Yan-Chun, LI Xiao-Dong, LIU Jing, LI Ming, LIU Hong-Wu, ZOU Guang-Tian. Phase Transition of Graphitic-C3N4 under High Pressure by In Situ Resistance Measurement in a Diamond Anvil Cell. Chin. Phys. Lett., 2005, 22(6): 1347-1349.
2005, Vol. 22 
