Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film
LI Xi-Jun1,2, ZHOU YI-Kai3, KIM M.3, KIMURA S.3, TERAGUCHI N.4, EMURA S.3, HASEGAWA S.3, ASAHI H.3
1College of Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065
2The Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film
LI Xi-Jun1,2;ZHOU YI-Kai3;KIM M.3;KIMURA S.3;TERAGUCHI N.4;EMURA S.3;HASEGAWA S.3;ASAHI H.3
1College of Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065
2The Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
Abstract： Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 10K to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.
LI Xi-Jun;ZHOU YI-Kai;KIM M.;KIMURA S.;TERAGUCHI N.;EMURA S.;HASEGAWA S.;ASAHI H.. Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film[J]. 中国物理快报, 2005, 22(2): 463-465.
LI Xi-Jun, ZHOU YI-Kai, KIM M., KIMURA S., TERAGUCHI N., EMURA S., HASEGAWA S., ASAHI H.. Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film. Chin. Phys. Lett., 2005, 22(2): 463-465.
2005, Vol. 22 
