In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure
HAN Yong-Hao1, LUO Ji-Feng1, HAO Ai-Min1, GAO Chun-Xiao1, XIE Hong-Sen2, QU Sheng-Chun3, LIU Hong-Wu1, ZOU Guang-Tian1
1State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012
2Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550002
3Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure
HAN Yong-Hao1;LUO Ji-Feng1;HAO Ai-Min1;GAO Chun-Xiao1;XIE Hong-Sen2;QU Sheng-Chun3;LIU Hong-Wu1;ZOU Guang-Tian1
1State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012
2Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550002
3Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract： An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.
HAN Yong-Hao;LUO Ji-Feng;HAO Ai-Min;GAO Chun-Xiao;XIE Hong-Sen;QU Sheng-Chun;LIU Hong-Wu;ZOU Guang-Tian. In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure[J]. 中国物理快报, 2005, 22(4): 927-930.
HAN Yong-Hao, LUO Ji-Feng, HAO Ai-Min, GAO Chun-Xiao, XIE Hong-Sen, QU Sheng-Chun, LIU Hong-Wu, ZOU Guang-Tian. In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure. Chin. Phys. Lett., 2005, 22(4): 927-930.
2005, Vol. 22 
