Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films
GU Hao-Shuang, ZHANG Kai, HU Guang, LI Wei-Yong
State Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062
Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films
GU Hao-Shuang;ZHANG Kai;HU Guang;LI Wei-Yong
State Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062
关键词 ：
85.50.-n ,
84.40.-x ,
77.84.-s
Abstract ： Thin film bulk acoustic resonators are fabricated by using silicon bulk micromachining technology, which are constructed mainly from aluminium nitride (AlN) piezoelectric films. The results of x-ray diffraction, scanning electron microscopy and atomic force microscopy show that the AlN films exhibit highly c-axis orientation with good surface morphology. The resonators with the AlN films possessed a reflection coefficient -10.6dB at the resonant frequency 2.537GHz, an effective electromechanical coupling coefficient 3.75%, series quality 101.8, and parallel quality 79.7.
Key words ：
85.50.-n
84.40.-x
77.84.-s
出版日期: 2006-11-01
:
85.50.-n
(Dielectric, ferroelectric, and piezoelectric devices)
84.40.-x
(Radiowave and microwave (including millimeter wave) technology)
77.84.-s
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
引用本文:
GU Hao-Shuang;ZHANG Kai;HU Guang;LI Wei-Yong. Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films[J]. 中国物理快报, 2006, 23(11): 3111-3114.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I11/3111
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