Electrical Properties of Ag-Doped Ge2Sb2Te5 Films Used for Phase Change Random Access Memory
XIA Ji-Lin1,3, LIU Bo1, SONG Zhi-Tang1,2, FENG Song-Lin2, CHEN Bomy4
1Research Center of Functional Semiconductor Film Engineering & Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3Graduate School of the Chinese Academy of Sciences, Beijing 100049
4Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA
Electrical Properties of Ag-Doped Ge2Sb2Te5 Films Used for Phase Change Random Access Memory
1Research Center of Functional Semiconductor Film Engineering & Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3Graduate School of the Chinese Academy of Sciences, Beijing 100049
4Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA
Abstract： Ag-doped Ge2Sb2Te5 films were deposited by rf magnetron sputtering on SiO2/Si substrates. The content of Ag ranging from 4.5 to 11.3 at.% is determined by inductively coupled plasma atomic emission spectrometry. The crystallization temperature of Ag-doped Ge2Sb2Te5 increases with the increasing Ag content and the stability of phase change film is improved greatly. Structures were measured by x-ray diffraction and the face-centered-cubic structure was more stable after Ag doping. Four-point probe was used to measure the sheet resistance of Ag-doped Ge2Sb2Te5 films annealed at different temperatures and it is indicated that Ag atoms increase the sheet resistance of Ge2Sb2Te5 thin film when the annealing temperature is higher than about 360°C, which is beneficial for reducing the reset current. Current-voltage curves were tested and it is demonstrated that 4.5 at.% Ag doping into the Ge2Sb2Te5 film can reduce the threshold current from 1.46mA to 0.25mA and can only increase the threshold voltage slightly, which is very useful for low energy consumption.
(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
引用本文:
XIA Ji-Lin;LIU Bo;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Electrical Properties of Ag-Doped Ge2Sb2Te5 Films Used for Phase Change Random Access Memory[J]. 中国物理快报, 2005, 22(4): 934-937.
XIA Ji-Lin, LIU Bo, SONG Zhi-Tang, FENG Song-Lin, CHEN Bomy. Electrical Properties of Ag-Doped Ge2Sb2Te5 Films Used for Phase Change Random Access Memory. Chin. Phys. Lett., 2005, 22(4): 934-937.
2005, Vol. 22 
