Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory
QIAO Bao-Wei1, FENG Jie1, LAI Yun-Feng1, LING Yun2, LIN Yin-Yin2, TANG Ting-Ao2, CAI Bing-Chu1, CHEN Bomy3
1National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030
2State Key Laboratory of ASIC & System, Fudan University, Shanghai 200433
3Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, USA
Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory
1National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030
2State Key Laboratory of ASIC & System, Fudan University, Shanghai 200433
3Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, USA
Abstract： Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centred-cubic (fcc) phase to hexagonal (hex) phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460°C annealing increases from 1 to 11mΩ .cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.
(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
引用本文:
QIAO Bao-Wei;FENG Jie;LAI Yun-Feng;LING Yun;LIN Yin-Yin;TANG Ting-Ao;CAI Bing-Chu;CHEN Bomy. Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory[J]. 中国物理快报, 2006, 23(1): 172-174.
QIAO Bao-Wei, FENG Jie, LAI Yun-Feng, LING Yun, LIN Yin-Yin, TANG Ting-Ao, CAI Bing-Chu, CHEN Bomy. Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory. Chin. Phys. Lett., 2006, 23(1): 172-174.
2006, Vol. 23 
