Dielectric Properties of Multilayered Ba0.5Sr0.5TiO3 Thin Films Deposited on ITO-Coated Corning 1737 Glass by rf Magnetron Sputtering
LIN Ming-Tong1, CHEN Guo-Rong1, YANG Yun-Xia1, XIAO Tian2, XU Yi2, LOU Jun-Hui2, CHEN Chen-Xi2
1Key Laboratory for Superfine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237
2SVA Electron Co. Ltd., Shanghai 200081
Dielectric Properties of Multilayered Ba0.5Sr0.5TiO3 Thin Films Deposited on ITO-Coated Corning 1737 Glass by rf Magnetron Sputtering
LIN Ming-Tong1;CHEN Guo-Rong1;YANG Yun-Xia1;XIAO Tian2;XU Yi2;LOU Jun-Hui2;CHEN Chen-Xi2
1Key Laboratory for Superfine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237
2SVA Electron Co. Ltd., Shanghai 200081
Abstract: A new stacking method via variation of substrate temperature in rf magnetron sputter is used to fabricate polycrystalline/polycrystalline Ba0.5Sr0.5TiO3 thin films with higher dielectric constant, higher breakdown strength and lower leakage current densities than those prepared by a conventional deposition method. The improved figure of merit G (ε0εrEb) of the Ba0.5Sr0.5TiO3 thin films implies that they are a feasible insulation layer for thin film electroluminescent devices.