Oxygen Pressure Dependence of Properties of Epitaxial LaAlO3 Films Grown on Si (100)
XIANG Wen-Feng, LU Hui-Bin, CHEN Zheng-Hao, HE Meng, ZHOU Yue-Liang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences,
Beijing 100080
Oxygen Pressure Dependence of Properties of Epitaxial LaAlO3 Films Grown on Si (100)
XIANG Wen-Feng;LU Hui-Bin;CHEN Zheng-Hao;HE Meng;ZHOU Yue-Liang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences,
Beijing 100080
关键词 ：
77.55.+f ,
81.40.Ef ,
81.40.Vw
Abstract ： Heteroepitaxial LaAlO3 films were grown on a SrTiO3 /Si (100) substrate by laser molecular beam epitaxy under different oxygen pressures, and their properties such as crystallinity and electrical characteristics were experimentally investigated using the various measurement methods. The results show that most properties depend mainly on the deposition oxygen pressure. The crystallinity and the C-V and I-V characteristics can be greatly improved with the increasing oxygen deposition pressure. Moreover, after annealed at 1050°C in N2 ambient, the C-V and I-V characteristics of LAO films deposited at the lower oxygen pressure are also improved due to the decrease of oxygen vacancies in LAO films.
Key words ：
77.55.+f
81.40.Ef
81.40.Vw
出版日期: 2005-06-01
:
77.55.+f
81.40.Ef
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
81.40.Vw
(Pressure treatment)
引用本文:
XIANG Wen-Feng;LU Hui-Bin;CHEN Zheng-Hao;HE Meng;ZHOU Yue-Liang. Oxygen Pressure Dependence of Properties of Epitaxial LaAlO3 Films Grown on Si (100)[J]. 中国物理快报, 2005, 22(6): 1515-1517.
3 Films Grown on Si (100). Chin. Phys. Lett., 2005, 22(6): 1515-1517.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I6/1515
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