Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer
DENG Jia-Jun1, ZHAO Jian-Hua1, JIANG Chun-Ping1, ZHANG Yan2, NIU Zhi-Chuan1, YANG Fu-Hua1, WU Xiao-Guang1, ZHENG Hou-Zhi1
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2School of Physics, Peking University, Beijing 100871
Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer
DENG Jia-Jun1;ZHAO Jian-Hua1;JIANG Chun-Ping1;ZHANG Yan2;NIU Zhi-Chuan1;YANG Fu-Hua1;WU Xiao-Guang1;ZHENG Hou-Zhi1
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2School of Physics, Peking University, Beijing 100871
Abstract： We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115K by postgrowth annealing for a 500-nm (Ga,Mn)As layer. Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
引用本文:
DENG Jia-Jun;ZHAO Jian-Hua;JIANG Chun-Ping;ZHANG Yan;NIU Zhi-Chuan;YANG Fu-Hua;WU Xiao-Guang;ZHENG Hou-Zhi. Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer[J]. 中国物理快报, 2005, 22(2): 466-468.
DENG Jia-Jun, ZHAO Jian-Hua, JIANG Chun-Ping, ZHANG Yan, NIU Zhi-Chuan, YANG Fu-Hua, WU Xiao-Guang, ZHENG Hou-Zhi. Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer. Chin. Phys. Lett., 2005, 22(2): 466-468.
2005, Vol. 22 
