NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System
YUE Shuang-Lin, LUO Qiang, SHI Cheng-Ying, YANG Hong-Xin, WANG Qiang, XU Peng, GU Chang-Zhi
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System
YUE Shuang-Lin;LUO Qiang;SHI Cheng-Ying;YANG Hong-Xin;WANG Qiang;XU Peng;GU Chang-Zhi
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
68.55.-a ,
81.40.Ef ,
81.15.Cd
Abstract ： By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si (100) substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness on the NiSi-film morphology and on the NiSi/Si interface roughness are studied.
Key words ：
68.55.-a
81.40.Ef
81.15.Cd
出版日期: 2006-03-01
:
68.55.-a
(Thin film structure and morphology)
81.40.Ef
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
81.15.Cd
(Deposition by sputtering)
引用本文:
YUE Shuang-Lin;LUO Qiang;SHI Cheng-Ying;YANG Hong-Xin;WANG Qiang;XU Peng;GU Chang-Zhi. NiSi Film Synthesized by Isochronal Annealing in a Magnetron Sputtering System[J]. 中国物理快报, 2006, 23(3): 678-681.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I3/678
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