Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering
JING Shi-Wei1,2, LIU Yi-Chun2, LIANG Yu1, MA Jian-Gang2, LU You-Ming2, SHEN De-Zhen2, ZHANG Ji-Ying2, FAN Xi-Wu2, MU Ri-Xiang3
1Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2Center for Advanced Opto-electronic Functional Material Research, Northeast Normal University, Changchun 130024
3Nanoscale Materials and Sensors Center for Photonic Materials and Devices, Fisk University, Nashville, TN 37208, USA
Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering
1Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2Center for Advanced Opto-electronic Functional Material Research, Northeast Normal University, Changchun 130024
3Nanoscale Materials and Sensors Center for Photonic Materials and Devices, Fisk University, Nashville, TN 37208, USA
Abstract： TiO2-xNx thin films are deposited onto Si(100) and quartz substrates by a rf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and O2 atmospheres. The substrate temperature is kept at 300°C. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2-xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2-xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N 1s of β-N (396eV) is the main component in the TiO2-xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8eV (for pure TiO2 film deposited by the same rf sputtering system) to 2.3eV, which is verified by the optical-absorption spectra.
(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
引用本文:
JING Shi-Wei;LIU Yi-Chun;LIANG Yu;MA Jian-Gang;LU You-Ming;SHEN De-Zhen;ZHANG Ji-Ying;FAN Xi-Wu;MU Ri-Xiang. Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering[J]. 中国物理快报, 2006, 23(3): 682-685.
JING Shi-Wei, LIU Yi-Chun, LIANG Yu, MA Jian-Gang, LU You-Ming, SHEN De-Zhen, ZHANG Ji-Ying, FAN Xi-Wu, MU Ri-Xiang. Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering. Chin. Phys. Lett., 2006, 23(3): 682-685.
2006, Vol. 23 
