Electrical Properties and Raman Spectra of BaBi1-x Pbx O3
HUANG Sheng-Li, RUAN Ke-Qing, TANG Yu, CAO Lie-Zhao, LI Xiao-Guang
Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026
Electrical Properties and Raman Spectra of BaBi1-x Pbx O3
HUANG Sheng-Li;RUAN Ke-Qing;TANG Yu;CAO Lie-Zhao;LI Xiao-Guang
Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026
关键词 ：
61.10.Nz ,
74.25.Fy ,
78.30.-j
Abstract ： Crystal structure, electrical properties and Raman spectra of BaBi1-x Pbx O3 are reported. The result of x-ray diffraction shows that the specimen is pure, and the lattice parameters decrease continuously in the semiconducting range, whereas it vibrates similarly to a sine wave in the superconducting range, which is ascribed to the existence of oxygen vacancies and the function of breathing modes of Bi(Pb)O6 . The temperature dependence of resistivity indicates that the electrical property of the samples is connected sensitively with the crystal structures. Raman spectra show that the specimen becomes disorder when x increases, and the critical temperature TC depends not only on the deformation potential of the soft Alg mode derived from the Bi(Pb)O6 rigid rotation, but also on the energy shift of the mode.
Key words ：
61.10.Nz
74.25.Fy
78.30.-j
出版日期: 2006-05-01
引用本文:
HUANG Sheng-Li;RUAN Ke-Qing;TANG Yu;CAO Lie-Zhao;LI Xiao-Guang. Electrical Properties and Raman Spectra of BaBi1-x Pbx O3 [J]. 中国物理快报, 2006, 23(5): 1245-1248.
1-x Pbx O3 . Chin. Phys. Lett., 2006, 23(5): 1245-1248.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I5/1245
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2006, Vol. 23 
