Abstract： We have studied the interfacial reactions between amorphous LaAlO3 thin films and Si substrates, using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interfacial layer between LaAlO3 film and Si substrate is SiLaxAlyOz. The depth distributions of La, Si and Al chemical states show that the ratio of La 4d3/2 to Al 2p of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content in the interfacial layer gradually decreases with increasing thickness of the interfacial layer. These results strongly suggest that the Al element is not deficient in the interfacial layer, as previously believed, and the formation of a SiLaxAlyOz interfacial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interfacial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.
(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
引用本文:
XIANG Wen-Feng;LU Hui-Bin;YAN Lei;HE Meng;ZHOU Yue-Liang;CHEN Zheng-Hao. Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition[J]. 中国物理快报, 2006, 23(2): 467-469.
XIANG Wen-Feng, LU Hui-Bin, YAN Lei, HE Meng, ZHOU Yue-Liang, CHEN Zheng-Hao. Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition. Chin. Phys. Lett., 2006, 23(2): 467-469.
2006, Vol. 23 
