Synthesis of GaN Nanorods by Ammoniating Ga2 O3 /ZnO Films
XUE Shou-Bin, ZHUANG Hui-Zhao, XUE Cheng-Shan, HU Li-Jun
Institute of Semiconductors, Shandong Normal University, Jinan 250014
Synthesis of GaN Nanorods by Ammoniating Ga2 O3 /ZnO Films
XUE Shou-Bin;ZHUANG Hui-Zhao;XUE Cheng-Shan;HU Li-Jun
Institute of Semiconductors, Shandong Normal University, Jinan 250014
关键词 ：
68.65.-k ,
78.30.Fs ,
81.15.Cd
Abstract ： Large quantities of GaN nanorods are successfully synthesized on Si(111) substrates by ammoniating the films of Ga2 O3 /ZnO at 950°C in a quartz tube. The structure, morphology and optical properties of the as-prepared GaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the GaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80nm to 300nm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.
Key words ：
68.65.-k
78.30.Fs
81.15.Cd
出版日期: 2006-11-01
:
68.65.-k
(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
78.30.Fs
(III-V and II-VI semiconductors)
81.15.Cd
(Deposition by sputtering)
引用本文:
XUE Shou-Bin;ZHUANG Hui-Zhao;XUE Cheng-Shan;HU Li-Jun. Synthesis of GaN Nanorods by Ammoniating Ga2 O3 /ZnO Films[J]. 中国物理快报, 2006, 23(11): 3055-3057.
2 O3 /ZnO Films. Chin. Phys. Lett., 2006, 23(11): 3055-3057.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I11/3055
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2006, Vol. 23 
