Abstract： Reducing the concentration of the metallic impurities present in silicon-based electronic components plays a vital role in manufactures. Gettering by induced mechanical damage is one of the methods used in neutralizing these impurities. To simulate this type of gettering, we explicitly include the role of the traps due to mechanical damage, based on the mechanism of kick-out. In our model, we choose the essential parameters including concentration of impurities, thickness, temperature, time, etc. The diffusion coefficient and equilibrium concentration of the silicon interstitials estimated from the literature have been adjusted to be in good agreement with the experimental data.
(Interaction between different crystal defects; gettering effect)
引用本文:
F. Ayad;M. Remram. Modelling of Gettering by Mechanical Damage of Metallic Impurities in Silicon[J]. 中国物理快报, 2006, 23(11): 3058-3060.
F. Ayad, M. Remram. Modelling of Gettering by Mechanical Damage of Metallic Impurities in Silicon. Chin. Phys. Lett., 2006, 23(11): 3058-3060.
2006, Vol. 23 
