Fabrication of GaN Nanorods in a Large Scale on Si(111) Substrate by Ammoniating Technique
AI Yu-Jie1 , XUE Cheng-Shan1 , SUN Li-Li1 , SUN Chuan-Wei2 , ZHUANG Hui-Zhao1 , WANG Fu-Xue, CHEN Jin-Hua1 , LI Hong1
1 Institute of Semiconductors, Shandong Normal University, Jinan 250014
2 School of Information Science and Engineering, Jinan University, Jinan 250022
Fabrication of GaN Nanorods in a Large Scale on Si(111) Substrate by Ammoniating Technique
AI Yu-Jie1 ;XUE Cheng-Shan1 ;SUN Li-Li1 ;SUN Chuan-Wei2 ;ZHUANG Hui-Zhao1 ;WANG Fu-Xue;CHEN Jin-Hua1 ;LI Hong1
1 Institute of Semiconductors, Shandong Normal University, Jinan 250014
2 School of Information Science and Engineering, Jinan University, Jinan 250022
关键词 ：
68.37.Hk ,
68.55.Jk ,
78.30.Fs
Abstract ： GaN nanorods in a large scale have been synthesized on Si (111) substrates by ammoniating Ga2 O3 /Mg films under flowing ammonia atmosphere at the temperature of 1000°C for 15min. The as-synthesized GaN nanorods are characterized by scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. The results demonstrate that these straight nanorods are hexagonal wurtzite GaN single crystals in diameters ranging from 200nm to 600nm.
Key words ：
68.37.Hk
68.55.Jk
78.30.Fs
出版日期: 2006-11-01
引用本文:
AI Yu-Jie;XUE Cheng-Shan;SUN Li-Li;SUN Chuan-Wei;ZHUANG Hui-Zhao;WANG Fu-Xue;CHEN Jin-Hua;LI Hong. Fabrication of GaN Nanorods in a Large Scale on Si(111) Substrate by Ammoniating Technique[J]. 中国物理快报, 2006, 23(11): 3052-3054.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I11/3052
[1]
LIU Xi-Zhe;HUANG Zhen;LI Ke-Xin;LI Hong;LI Dong-Mei;CHEN Li-Quan;MENG Qing-Bo. Recombination Reduction in Dye-Sensitized Solar Cells by Screen-Printed TiO2 Underlayers
[2]
SUN Xi-Lian;SHAO Jian-Da. Effect of Alumina and Chromium Interlayers on Microstructures and Optical Properties of Thin Ag Films on Glass Substrates
[3]
XU Wei-Wei;DAI Song-Yuan; HU Lin-Hua;LIANG Lin-Yun;WANG Kong-Jia. Influence of Yb-Doped Nanoporous TiO2 Films on Photovoltaic Performance of Dye-Sensitized Solar Cells
[4]
XU Chuan-Ming;SUN Yun;ZHOU Lin;LI Feng-Yan; ZHANG Li;XUE Yu-Ming;ZHOU Zhi-Qiang;HE Qing. Preparation of Cu(In,Ga)Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere
[5]
WEI He-Lin;ZHANG Xi-Xiang;HUANG Han-Chen. Spontaneous Hillock Growth on Indium Film Surface
[6]
SUI Xiao-Hong;PEI Wei-Hua;ZHANG Ruo-Xin;LU Lin;CHEN Hong-Da. A Micromachined SiO2 /Silicon Probe for Neural Signal Recordings
[7]
SUN Jian;BAI Yi-Zhen;YANG Tian-Peng;XU Yi-Bin;WANG Xin-Sheng;DU Guo-Tong;WU Han-Hua. Deposition of ZnO Films on Freestanding CVD Thick Diamond Films
[8]
ZHANG Gu-Ling;WANG Jiu-Li;WU Xing-Fang;FENG Wen-Ran;CHEN Guang-Liang;GU Wei-Chao;NIU Er-Wu;FAN Song-Hua;LIU Chi-Zi;YANG Si-Ze. Inner Surface Modification of a Tube by Magnetic Glow-Arc Plasma Source Ion Implantation
[9]
ZHANG Qin-Yuan; YANG Gang-Feng;JIANG Zhong-Hong;W. X. Que. Structural and Luminescence Properties of Transparent Nanocrystalline ZrO2 :Er3+ Films
[10]
XU Chuan-Ming;SUN Yun;LI Feng-Yan;ZHANG Li;XUE Yu-Ming;HE Qing;LIU Hong-Tu. Nonlinear Shift of the Raman A1 Mode in Ga-Incorporated CuInSe2 Thin Films
[11]
XUE Shou-Bin;ZHUANG Hui-Zhao;XUE Cheng-Shan;HU Li-Jun. Synthesis of GaN Nanorods by Ammoniating Ga2 O3 /ZnO Films
[12]
FEI Chun-Hong;PENG Zeng-Hui;LV Feng-Zhen;ZHANG Ling-Li;YAO Li-Shuang;XUAN Li. Effect of Molecular Weight on Liquid Crystal Photoalignment by Photosensitive Polyester Containing Thrifluoromethyl Moieties
[13]
HAO Wei-Chang;PAN Feng;WANG Tian-Min;ZHOU Chun-Lan;WEI Long. Self-Assembled TiO2 /PSS Multilayer Films Studied by Slow Positron Spectroscopy
[14]
QIN Qi;GUO Li-Wei;ZHOU Zhong-Tang;CHEN Hong;DU Xiao-Long;MEI Zeng-Xia;JIA Jin-Feng;XUE Qi-Kun;ZHOU Jun-Ming. Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases
[15]
WANG Jian-Guo;SHAO Jian-Da;WANG Su-Mei;HE Hong-Bo;FAN Zheng-Xiu. Form Birefringence in Thin Films with Oblique Columnar Structures
2006, Vol. 23 
