A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Filed Effect Transistor to Suppress the Floating Body Effect
ZHU Ming, LIN Qing, ZHANG Zheng-Xuan, LIN Cheng-Lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Filed Effect Transistor to Suppress the Floating Body Effect
ZHU Ming;LIN Qing;ZHANG Zheng-Xuan;LIN Cheng-Lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Abstract： Considering that the silicon-on-insulator (SOI) devices have an inherent floating body effect, which may cause substantial influences in the performance of SOI device and circuit, we propose a novel device structure to suppress the floating body effect. In the new structure there is a buried p+ region under the n+ source and that region is extended to outside of the source, and this additional p+ region provides a path for accumulated holes to flow out of the body. Numerical simulations were carried out with Medici, and the output characteristics and gate characteristics were compared with those of conventional SOI counterparts. The simulated results show the suppression of floating body effect in the novel SOI device as expected.
ZHU Ming;LIN Qing;ZHANG Zheng-Xuan;LIN Cheng-Lu. A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Filed Effect Transistor to Suppress the Floating Body Effect[J]. 中国物理快报, 2003, 20(5): 767-769.
ZHU Ming, LIN Qing, ZHANG Zheng-Xuan, LIN Cheng-Lu. A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Filed Effect Transistor to Suppress the Floating Body Effect. Chin. Phys. Lett., 2003, 20(5): 767-769.
2003, Vol. 20 
