Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterosturctures Using Pre-deposition Surface Treatment
LIU Jie1, SHEN Bo1, WANG Mao-Jun1, ZHOU Yu-Gang1, ZHENG Ze-Wei1, ZHANG Rong1, SHI Yi1, ZHENG You-Dou1, T. Someya2, Y. Arakawa2
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, Kamaba 4-6-1, Meguro-Ku, Tokyo 153, Japan
Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterosturctures Using Pre-deposition Surface Treatment
LIU Jie1;SHEN Bo1;WANG Mao-Jun1;ZHOU Yu-Gang1;ZHENG Ze-Wei1;ZHANG Rong1;SHI Yi1;ZHENG You-Dou1;T. Someya2; Y. Arakawa2
1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, Kamaba 4-6-1, Meguro-Ku, Tokyo 153, Japan
Abstract： Pt/Au Schottky contacts were fabricated on modulation-doped Al0.22GaN0.78/GaN heterostructures. Some different pre-deposition surface treatments were used to prevent the formation of the native oxide layer on the Al0.22GaN0.78 surface. X-ray photoelectron spectroscopy (XPS) measurements indicate that the pre-deposition surface treatment with boiling (NH4)2S solution can remove the native oxide layer on the Al0.22GaN0.78 surface effectively. The highest Schottky barrier height of 1.13 eV was obtained on the (NH4)2S-treated Al0.22GaN0.78 heterostructure.
2002, Vol. 19 
