Surface States in the Alx Ga1-x N Barrier in Alx Ga1-x N/GaN Heterostructures
LIU Jie, SHEN Bo, WANG Mao-Jun, ZHOU Yu-Gang, CHEN Dun-Jun, ZHANG Rong, SHI Yi, ZHENG You-Dou
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
Surface States in the Alx Ga1-x N Barrier in Alx Ga1-x N/GaN Heterostructures
LIU Jie;SHEN Bo;WANG Mao-Jun;ZHOU Yu-Gang;CHEN Dun-Jun;ZHANG Rong;SHI Yi;ZHENG You-Dou
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
73.30.+y ,
81.65.-b
Abstract ： Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22 Ga0.78 N/GaN heterostructures to investigate the characteristics of the surface states in the Alx Ga1-x N barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the Alx Ga1-x N barrier. The density of the surface states is about 1012 cm-2 eV-1 , and the time constant is about 1 μs. It is found that an insulating layer (Si3 N4 ) between the metal contact and the surface of Alx Ga1-x N can passivate the surface states effectively.
Key words ：
73.30.+y
81.65.-b
出版日期: 2004-01-01
:
73.30.+y
(Surface double layers, Schottky barriers, and work functions)
81.65.-b
(Surface treatments)
引用本文:
LIU Jie;SHEN Bo;WANG Mao-Jun;ZHOU Yu-Gang;CHEN Dun-Jun;ZHANG Rong;SHI Yi;ZHENG You-Dou. Surface States in the Alx Ga1-x N Barrier in Alx Ga1-x N/GaN Heterostructures[J]. 中国物理快报, 2004, 21(1): 170-172.
x Ga1-x N Barrier in Alx Ga1-x N/GaN Heterostructures. Chin. Phys. Lett., 2004, 21(1): 170-172.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I1/170
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