Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method
LIU Qi-Bin1,2, SONG Zhi-Tang1, ZHANG Kai-Liang1, WANG Liang-Yong1, FENG Song-Lin1, CHEN Bomy3
1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Graduate School of Chinese Academy of Sciences, Beijing 100039
3Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA
Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method
LIU Qi-Bin1,2;SONG Zhi-Tang1;ZHANG Kai-Liang1;WANG Liang-Yong1;FENG Song-Lin1;CHEN Bomy3
1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Graduate School of Chinese Academy of Sciences, Beijing 100039
3Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA
Abstract： A damascene structure of phase change memory (PCM) is fabricated successfully with the chemical mechanical polishing (CMP) method, and the CMP of Ge2Sb2Te5 (GST) and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy (SEM) and an energy dispersive spectrometer (EDS). The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90mA and 1.15mA.
2006, Vol. 23 
