Schottky Barrier Heights of Cr Contacts on n- and p-Type 6H-SiC
ZHANG Yong-gang, LI Ai-zhen, A. G. Milnes1
State Key Laboratory of functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
1Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15313, U. S. A.
Schottky Barrier Heights of Cr Contacts on n- and p-Type 6H-SiC
ZHANG Yong-gang;LI Ai-zhen;A. G. Milnes1
State Key Laboratory of functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
1Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15313, U. S. A.
Abstract： The Schottky contact characteristics of Cr on n- and p-type 6H-SiC have been investigated by using I-V and C-V methods, and the barrier heights and ideality factors have been measured. Results obtained show that Cr is also an appropriate metal to form Schottky junction on n type 6H-SiC, as the barrier height of ~ 1 eV is moderate for both low forward turn on voltage and low backward leakage current in device applications. However, the interfacial properties of Cr to p type 6H-SiC results in nonideal Schottky junctions.
(Surface barrier, boundary, and point contact devices)
引用本文:
ZHANG Yong-gang;LI Ai-zhen;A. G. Milnes. Schottky Barrier Heights of Cr Contacts on n- and p-Type 6H-SiC[J]. 中国物理快报, 1997, 14(6): 460-463.
ZHANG Yong-gang, LI Ai-zhen, A. G. Milnes. Schottky Barrier Heights of Cr Contacts on n- and p-Type 6H-SiC. Chin. Phys. Lett., 1997, 14(6): 460-463.
1997, Vol. 14 
