Local Surface Potential of GaN Nanostructures Probed by Kelvin
Force Microscopy
GU Xiao-Xiao1, HUANG Da-Ming1, MORKOC Hadis2
1Surface Physics Laboratory and Department of Physics, Fudan University, Shanghai 200433
2Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220, USA
Local Surface Potential of GaN Nanostructures Probed by Kelvin
Force Microscopy
GU Xiao-Xiao1;HUANG Da-Ming1;MORKOC Hadis2
1Surface Physics Laboratory and Department of Physics, Fudan University, Shanghai 200433
2Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220, USA
Abstract： We have measured the fluctuation in local surface potential of GaN epitaxial films having two different types of nanostructure, as-grown islands or etched pits, by Kelvin probe force microscopy. We found that the perimeters of as-grown islands and the internal walls of etchd pits have lower surface potential as compared to the as-grown c-plane. The results show that the crystallographic facets tilted with respect to c-plane have higher work function and are electrically more active than c-surface.
(Surface double layers, Schottky barriers, and work functions)
引用本文:
GU Xiao-Xiao;HUANG Da-Ming;MORKOC Hadis. Local Surface Potential of GaN Nanostructures Probed by Kelvin
Force Microscopy[J]. 中国物理快报, 2003, 20(10): 1822-1825.
GU Xiao-Xiao, HUANG Da-Ming, MORKOC Hadis. Local Surface Potential of GaN Nanostructures Probed by Kelvin
Force Microscopy. Chin. Phys. Lett., 2003, 20(10): 1822-1825.
2003, Vol. 20 
