Computer Simulation of Early Stage in Thin-Film Growth
WU Feng-min1 , LI Qiao-wen1 , ZHU Qi-peng1 , WU Zi-qin2
1 Institute of Technical Physics, Zhejiang University of Technology Hangzhou 310014
2 Center of Fundamental Physics, University of Science and Technology of China, Hefei 230026
Computer Simulation of Early Stage in Thin-Film Growth
WU Feng-min1 ;LI Qiao-wen1 ;ZHU Qi-peng1 ;WU Zi-qin2
1 Institute of Technical Physics, Zhejiang University of Technology Hangzhou 310014
2 Center of Fundamental Physics, University of Science and Technology of China, Hefei 230026
关键词 ：
68.70.+w ,
68.55.-a ,
64.60.Ak
Abstract ： Nucleation and growth process has been studied on atomic scale for the early stage of thin-film growth by means of computer simulation. The island number and its shape vary with a set of control conditions, such as deposition flux R, surface diffusion rate W and coverage. The kinetic parameters p and q obtained from simulation are positive and dependent on the growth process. The transition from the initial steps of nucleation to growth is also explored. The simulation results are consistent with the experiments and the rate equations from nucleation theory.
Key words ：
68.70.+w
68.55.-a
64.60.Ak
出版日期: 1999-04-01
:
68.70.+w
(Whiskers and dendrites (growth, structure, and nonelectronic properties))
68.55.-a
(Thin film structure and morphology)
64.60.Ak
引用本文:
WU Feng-min;LI Qiao-wen;ZHU Qi-peng;WU Zi-qin. Computer Simulation of Early Stage in Thin-Film Growth[J]. 中国物理快报, 1999, 16(4): 279-281.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I4/279
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