Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping
SUN Jing-Chang, LIANG Hong-Wei, ZHAO Jian-Ze, BIAN Ji-Ming, FENG Qiu-Ju, WANG Jing-Wei, ZHAO Zi-Wen, DU Guo-Tong
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024
Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping
SUN Jing-Chang, LIANG Hong-Wei, ZHAO Jian-Ze, BIAN Ji-Ming, FENG Qiu-Ju, WANG Jing-Wei, ZHAO Zi-Wen, DU Guo-Tong
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024
摘要ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.
Abstract：ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature.
SUN Jing-Chang;LIANG Hong-Wei;ZHAO Jian-Ze;BIAN Ji-Ming;FENG Qiu-Ju;WANG Jing-Wei;ZHAO Zi-Wen;DU Guo-Tong. Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping[J]. 中国物理快报, 2008, 25(12): 4345-4347.
SUN Jing-Chang, LIANG Hong-Wei, ZHAO Jian-Ze, BIAN Ji-Ming, FENG Qiu-Ju, WANG Jing-Wei, ZHAO Zi-Wen, DU Guo-Tong. Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping. Chin. Phys. Lett., 2008, 25(12): 4345-4347.
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