Optical Defect in GaN-Based Laser Diodes Detected by Cathodoluminescence
ZHAO Lu-Bing, WU Jie-Jun, XU Ke, BAO Kui, YANG Zhi-Jian, PAN Yao-Bo, HU Xiao-Dong, ZHANG Guo-Yi
Research Center for Wide Gap Semiconductors, Peking University, State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871
Optical Defect in GaN-Based Laser Diodes Detected by Cathodoluminescence
ZHAO Lu-Bing, WU Jie-Jun, XU Ke, BAO Kui, YANG Zhi-Jian, PAN Yao-Bo, HU Xiao-Dong, ZHANG Guo-Yi
Research Center for Wide Gap Semiconductors, Peking University, State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871
摘要GaN-based laser diodes (LDs) with 399nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition (MOCVD). Electroluminescence spectra of the fabricated LDs show that the LDs from some grown wafers failed to emit laser. The SEM and XRD results show the similar surface morphology and interface qualities of multi quantum wells (MQWs) and super-lattices between LDs that succeed and fail to emit laser. However, the cathodoluminescence (CL) measurements reveal a kind of optical defect rather than structural defect in un-emitted LDs. Further depth-dependent CL imaging observation indicates that such optical defects originate from the MQWs to the surface of LDs as a non-irradiative recombination centre that should cause the failure of laser emitting of LDs.
Abstract：GaN-based laser diodes (LDs) with 399nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition (MOCVD). Electroluminescence spectra of the fabricated LDs show that the LDs from some grown wafers failed to emit laser. The SEM and XRD results show the similar surface morphology and interface qualities of multi quantum wells (MQWs) and super-lattices between LDs that succeed and fail to emit laser. However, the cathodoluminescence (CL) measurements reveal a kind of optical defect rather than structural defect in un-emitted LDs. Further depth-dependent CL imaging observation indicates that such optical defects originate from the MQWs to the surface of LDs as a non-irradiative recombination centre that should cause the failure of laser emitting of LDs.
[1] Nakamura S et al 1996 Jpn. J. Appl. Phys. 35 L74 [2] Nakamura S et al 1996 Appl. Phys. Lett. 694056 [3] Nakamura S 1998 J. Crystal Growth 195 242 [4] Lee S N et al 2007 J. Crystal Growth 298 695 [5] Hansen M et al 2002 J. Crystal Growth 234 623 [6]Yabuuchi Y and Inazato S 1999 J. Electron. Microsc. 48 791 [7] Florescu D I et al 2003 Appl. Phys. Lett. 8333 [8] Pauc N, Phillips M R, Aimez V and Drouin 2006 Appl.Phys. Lett. 89 161905 [9] Chichibu S, Wada K and Nakamura S 1997 Appl. Phys.Lett. 71 2346. [10] Albrecht M et al 1999 Phys. Status Solidi B 216 409 [11] Henleya S J and Cherns D 2003 J. Appl. Phys. 93 3934 [12] Kanaya K and Okayama S 1972 J. Phys. D: Appl. Phys. 5 43 [13] Jung Y S, Choi W K, Kononenko O V and Panin G N 2006 J. Appl. Phys. 99 013502
2008, Vol. 25 
