| 2008, Vol. 25(12): 4345-4347 DOI: | ||
| Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping | ||
| SUN Jing-Chang, LIANG Hong-Wei, ZHAO Jian-Ze, BIAN Ji-Ming, FENG Qiu-Ju, WANG Jing-Wei, ZHAO Zi-Wen, DU Guo-Tong | ||
| School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 | ||
| 收稿日期 2008-09-07 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] Zhong H M, Lu W, Sun Y and Li Z F 2007 Chin. Phys. [2] Look D C, Reynolds D C et al 2002 Appl. Phys. Lett. [3] LV J G, YE Z Z et al 2002 Chin. Phys. Lett. [4] Tsukazaki A, Kubota M et al 2005 Jpn. J. Appl. Phys. [5] Liu W, Gu S L et al 2006 Appl. Phys. Lett. 88 [6] Ryu Y R, Lee T S et al 2006 Appl. Phys. Lett. [7] Jiao S, Zhang Z Z et al 2006 Appl. Phys. Lett. [8] Sun J C, Zhao J Z et al 2007 Appl. Phys. Lett. [9] Chu S, Lim J H et al 2008 Appl. Phys. Lett. 92 [10] Yang T P, Bian J M et al 2008 J. Mater. Process. [11] Sun J C, Bian J M et al 2007 Appl. Surf. Sci. [12] Bylander E G 1978 J. Appl. Phys. 49 1188 [13] Look D C, Hemsky J W, Sizelove J R 1999 Phys. Rev. [14] Alivov,Y I, Van Nostrand J E, Look D C, Chukichev M V, [15] Sun Y, Ketterson J B and Wong G K L 2000 Appl. Phys. [16] Bian J M, Liu W F, Sun J C and Liang H W 2007 J. [17] Chen P, Ma X Y and Yang D 2007 J. Appl. Phys. |
||