Electrically Pumped Ultraviolet Random Lasing from p-ZnO:As Based on p-ZnO/N-GaN Heterojunction
ZHANG Yuan-Tao1**, XIA Xiao-Chuan2, WU Bin1, SHI Zhi-Feng1, YANG Fan1, YANG Xiao-Tian3, ZHANG Bao-Lin1, DU Guo-Tong1,2
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 2School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023 3School of electrical and electronic information, Jilin Institute of Architecture and Civil Engineering, Changchun 130118
Abstract：p-ZnO:As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO:As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of ～1017 cm?3 and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO:As by further introducing the p-ZnO/MgO/n-GaN heterostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO:As fabricated by using our methods.
. [J]. 中国物理快报, 2014, 31(05): 58101-058101.
ZHANG Yuan-Tao, XIA Xiao-Chuan, WU Bin, SHI Zhi-Feng, YANG Fan, YANG Xiao-Tian, ZHANG Bao-Lin, DU Guo-Tong. Electrically Pumped Ultraviolet Random Lasing from p-ZnO:As Based on p-ZnO/N-GaN Heterojunction. Chin. Phys. Lett., 2014, 31(05): 58101-058101.
2014, Vol. 31 
