Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer
Ying-Xi Niu1,2 , Xiao-Yan Tang1** , Ren-Xu Jia1 , Ling Sang2 , Ji-Chao Hu3 , Fei Yang2 , Jun-Min Wu2 , Yan Pan2 , Yu-Ming Zhang1
1 School of Microelectronics, Xidian University, the State Key Laboratory of Wide Band Gap Semiconductor Technology, Xi'an 7100712 State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute, Beijing 1022113 Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048
Abstract ：Effect of triangle structure defects in a 180-μm-thick as-grown n-type 4H-SiC homoepitaxial layer on the carrier lifetime is quantitatively analyzed, which is grown by a horizontal hot-wall chemical vapor deposition reactor. By microwave photoconductivity decay lifetime measurements and photoluminescence measurements, the results show that the average carrier lifetime of as-grown epilayer across the whole wafer is 2.59 μs, while it is no more than 1.34 μs near a triangle defect (TD). The scanning transmission electron microscope results show that the triangle structure defects have originated from 3C-SiC polytype and various types of as-grown stacking faults. Compared with the as-grown stacking faults, the 3C-SiC polytype has a great impact on the lifetime. The reduction of TD is essential to increasing the carrier lifetime of the as-grown thick epilayer.
收稿日期: 2018-04-17
出版日期: 2018-06-24
:
71.20.Nr
(Semiconductor compounds)
61.72.-y
(Defects and impurities in crystals; microstructure)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
. [J]. 中国物理快报, 2018, 35(7): 77103-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/7/077103
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I7/77103
[1] Matsunami H and Kimoto T 1997 J. Mater. Sci. Eng. R 20 125 [2] Dong L, Sun G S, Yu J et al 2013 Chin. Phys. Lett. 30 096105 [3] Kimoto T 2015 Jpn. J. Appl. Phys. 54 040103 [4] Van Brunt E, Cheng L, O'Loughlin M J et al 2015 Mater. Sci. Forum 821 847 [5] Kaji N, Niwa H, Suda J et al 2015 IEEE Trans. Electron Devices 62 374 [6] Zhang J, Storasta L, Bergman J P et al 2003 J. Appl. Phys. 934 708 [7] Tawara T, Tsuchida H, Izumi S et al 2004 Mater. Sci. Forum 457 565 [8] Kawahara K, Thang Trinh X, Tien Son N et al 2014 J. Appl. Phys. 115 143705 [9] Ayedh H M, Nipoti R, Hallén A et al 2017 J. Appl. Phys. 122 025701 [10] Kimoto T, Kawahara K, Zippelius B et al 2016 Superlattices Microstruct. 99 151 [11] Klein P B, Shanabrook B V, Huh S W et al 2006 Appl. Phys. Lett. 88 052110 [12] Son N T, Trinh X T, Løvlie L S et al 2012 Phys. Rev. Lett. 109 187603 [13] Cheng P, Zhang Y M, Zhang Y M et al 2010 Chin. Phys. B 19 097802 [14] Miyazawa T, Ito M and Tsuchida H 2010 Appl. Phys. Lett. 97 202106 [15] Ichikawa S, Kawahara K, Suda J et al 2012 Appl. Phys. Express 5 101301 [16] Zippelius B, Suda J and Kimoto T 2012 J. Appl. Phys. 111 033515 [17] Ayedh H M, Bobal V, Nipoti R et al 2014 J. Appl. Phys. 115 012005 [18] Kimoto T and Cooper J A 2014 Fundamentals of Silicon Carbide Technology (Singapore: Wiley) [19] Storasta L and Tsuchida H 2007 Appl. Phys. Lett. 90 062116 [20] Saito E, Suda J and Kimoto T 2016 Appl. Phys. Express 9 061303 [21] Burk A A, Richmond J, Zhang J et al 2017 Mater. Sci. Forum 897 587 [22] Danno K, Nakamura D and Kimoto T 2007 Appl. Phys. Lett. 90 202109 [23] Kimoto T, Danno K and Suda J 2008 Phys. Status Solidi B 245 1327 [24] Myers-Ward R L, Lew K K, VanMil B L et al 2008 Mater. Sci. Forum 600 481 [25] Taishi T, Hoshikawa T, Yamatani M et al 2007 J. Cryst. Growth 306 452 [26] Hallin C, Konstantinov A O and Pecz B 1997 Diamond Relat. Mater. 6 1297 [27] Booker I D, Hassan J U, Lilja L et al 2014 Cryst. Growth Des. 14 4104 [28] Miyanagi T and Nishino S 2002 Mater. Sci. Forum 389 199 [29] Feng G, Suda J and Kimoto T 2009 Appl. Phys. Express 94 091910 [30] Hoshino N, Tajima M, Nishiguchi T et al 2007 Jpn. J. Appl. Phys. 46 L973 [31] Odawara M, Koji K, Yoshihiko M et al 2014 Mater. Sci. Forum 778 382 [32] Liu K, Stahlbush R, Twigg M E et al 2007 J. Electron. Mater. 36 297 [33] Wu P, Emorhokpor E, Yoganathan M et al 2007 Mater. Sci. Forum 556 247
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
.
[15]
.
2018, Vol. 35 
