中国物理快报  2017, Vol. 34 Issue (4): 48101-048101    DOI: 10.1088/0256-307X/34/4/048101
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High-Quality and Strain-Relaxation GaN Epilayer Grown on SiC Substrates Using AlN Buffer and AlGaN Interlayer
Bo-Ting Liu1, Shi-Kuan Guo1, Ping Ma1,2,3,4**, Jun-Xi Wang1,2,3,4, Jin-Min Li1,2,3,4**
1Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
3State Key Laboratory of Solid State Lighting, Beijing 100083
4Beijing Engineering Research Center for the Third-Generation Semiconductor Materials and Application, Beijing 100083