1Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049 3State Key Laboratory of Solid State Lighting, Beijing 100083 4Beijing Engineering Research Center for the Third-Generation Semiconductor Materials and Application, Beijing 100083
Abstract：We investigate the influence of Al preflow time on surface morphology and quality of AlN and GaN. The AlN and GaN layers are grown on a Si (111) substrate by metal organic chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, x-ray diffraction and optical microscopy are used for analysis. Consequently, we find significant differences in the epitaxial properties of AlN buffer and the GaN layer, which are dependent on the Al preflow time. Al preflow layers act as nucleation sites in the case of AlN growth. Compact and uniform AlN nucleation sites are observed with optimizing Al preflow at an early nucleation stage, which will lead to a smooth AlN surface. Trenches and AlN grain clusters appear on the AlN surface while melt-back etching occurs on the GaN surface with excessive Al preflow. The GaN quality variation keeps a similar trend with the AlN quality, which is influenced by Al preflow. With an optimized duration of Al preflow, crystal quality and surface morphology of AlN and GaN could be improved.
(Elasticity and anelasticity, stress-strain relations)
引用本文:
. [J]. 中国物理快报, 2017, 34(5): 58101-.
Bo-Ting Liu, Ping Ma, Xi-Lin Li, Jun-Xi Wang, Jin-Min Li. Influence of Al Preflow Time on Surface Morphology and Quality of AlN and GaN on Si (111) Grown by MOCVD. Chin. Phys. Lett., 2017, 34(5): 58101-.
2017, Vol. 34 
