Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs$_{x}$Sb$_{1-x}$ Buffer Layers
Hai-Long Yu, Hao-Yue Wu, Hai-Jun Zhu, Guo-Feng Song, Yun Xu**
Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract ：We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using compositionally graded GaAs$_{x}$Sb$_{1-x}$ buffer layers. Optimization of GaAs$_{x}$Sb$_{1-x}$ growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of GaAs$_{x}$Sb$_{1-x}$ layers are found to be 420$^\circ\!$C and 0.5 μm, respectively. The smallest full width at half maximum value and the root mean square surface roughness of 0.67 nm over $2\times2$ μm$^{2}$ area are achieved as a 250 nm GaSb film is grown under optimized conditions.
收稿日期: 2016-08-11
出版日期: 2016-12-29
:
81.05.Ea
(III-V semiconductors)
81.10.Pq
(Growth in vacuum)
74.78.Fk
(Multilayers, superlattices, heterostructures)
81.15.-z
(Methods of deposition of films and coatings; film growth and epitaxy)
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2017, Vol. 34 
