Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer
Shen Yan1,2, Xiao-Tao Hu1,2, Jun-Hui Die1,2, Cai-Wei Wang1,2, Wei Hu1,2, Wen-Liang Wang3, Zi-Guang Ma1,2, Zhen Deng1,2,4, Chun-Hua Du1,2,4, Lu Wang1,2, Hai-Qiang Jia1,2,5, Wen-Xin Wang1,2,5, Yang Jiang1,2**, Guoqiang Li3**, Hong Chen1,2,5
1Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 2Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049 3State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 4The Yangtze River Delta Physics Research Center, Liyang 213000 5Songshan Lake Materials Laboratory, Dongguan 523808
Abstract：We demonstrate that a low-temperature GaN insertion layer could significantly improve the surface morphology of non-polar a-plane GaN.The two key factors in improving the surface morphology of non-polar a-plane GaN are growth temperature and growth time of the GaN insertion layer. The root-mean-square roughness of a-plane GaN is reduced by 75% compared to the sample without the GaN insertion layer. Meanwhile, the GaN insertion layer is also beneficial for improving crystal quality. This work provides a simple and effective method to improve the surface morphology of non-polar a-plane GaN.
2020, Vol. 37 
